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hal501...506, 508, 509, hal516...519, 523 6251-109-4e edition feb. 14, 2001 6251-485-2ds micr onas micr onas micr onas micr onas micronas hall effect sensor family
hal5xx 2 micronas contents page section title 3 1. introduction 3 1.1. features 3 1.2. family overview 4 1.3. marking code 4 1.3.1. special marking of prototype parts 4 1.4. operating junction temperature range 4 1.5. hall sensor package codes 4 1.6. solderability 5 2. functional description 6 3. specifications 6 3.1. outline dimensions 6 3.2. dimensions of sensitive area 6 3.3. positions of sensitive areas 7 3.4. absolute maximum ratings 7 3.5. recommended operating conditions 8 3.6. electrical characteristics 9 3.7. magnetic characteristics overview 14 4. type descriptions 14 4.1. hal501 16 4.2. hal502 18 4.3. hal503 20 4.4. hal504 22 4.5. hal505 24 4.6. hal506 26 4.7. hal508 28 4.8. hal509 30 4.9. hal516 32 4.10. hal517 34 4.11. hal518 36 4.12. hal519 38 4.13. hal523 40 5. application notes 40 5.1. ambient temperature 40 5.2. extended operating conditions 40 5.3. start-up behavior 40 5.4. emc 44 6. data sheet history
hal5xx 3 micronas hall effect sensor family in cmos technology release notes: revision bars indicate significant changes to the previous edition. 1. introduction the hal5xx family consists of different hall switches produced in cmos technology. all sensors include a temperature-compensated hall plate with active offset compensation, a comparator, and an open-drain output transistor. the comparator compares the actual mag- netic flux through the hall plate (hall voltage) with the fixed reference values (switching points). accordingly, the output transistor is switched on or off. the sensors of this family differ in the switching behavior and the switching points. the active offset compensation leads to constant mag- netic characteristics over supply voltage and tempera- ture range. in addition, the magnetic parameters are ro- bust against mechanical stress effects. the sensors are designed for industrial and automotive applications and operate with supply voltages from 3.8 v to 24 v in the ambient temperature range from ?40 c up to 150 c. all sensors are available in a smd-package (sot-89b) and in a leaded version (to-92ua). 1.1. features: ? switching offset compensation at typically 62 khz ? operates from 3.8 v to 24 v supply voltage ? overvoltage protection at all pins ? reverse-voltage protection at v dd -pin ? magnetic characteristics are robust against mechani- cal stress effects ? short-circuit protected open-drain output by thermal shut down ? operates with static magnetic fields and dynamic mag- netic fields up to 10 khz ? constant switching points over a wide supply voltage range ? the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the mag- netic characteristics ? ideal sensor for applications in extreme automotive and industrial environments ? emc corresponding to din 40839 1.2. family overview the types differ according to the magnetic flux density values for the magnetic switching points, the tempera- ture behavior of the magnetic switching points, and the mode of switching. type switching behavior sensitivity see page 501 bipolar very high 14 502 latching high 16 503 latching medium 18 504 unipolar medium 20 505 latching low 22 506 unipolar high 24 508 unipolar medium 26 509 unipolar low 28 516 unipolar with inverted output high 30 517 unipolar with inverted output medium 32 518 unipolar with inverted output medium 34 519 unipolar with inverted output (north polarity) high 36 523 unipolar low 38 latching sensors: the output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. the output does not change if the magnetic field is removed. for changing the output state, the opposite magnetic field polarity must be applied. bipolar switching sensors: the output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. the output state is not defined for all sensors if the magnetic field is removed again. some sensors will change the output state and some sensors will not.
hal5xx 4 micronas unipolar switching sensors: the output turns low with the magnetic south pole on the branded side of the package and turns high if the mag- netic field is removed. the sensor does not respond to the magnetic north pole on the branded side. unipolar switching sensors with inverted output: the output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. the sensor does not respond to the magnetic north pole on the branded side. unipolar switching sensors with inverted output sensitive to north pole: the output turns high with the magnetic north pole on the branded side of the package and turns low if the magnet- ic field is removed. the sensor does not respond to the magnetic south pole on the branded side. 1.3. marking code all hall sensors have a marking on the package surface (branded side). this marking includes the name of the sensor and the temperature range. type temperature range a k e hal501 501a 501k 501e hal502 502a 502k 502e hal503 503a 503k 503e hal504 504a 504k 504e hal505 505a 505k 505e hal506 506a 506k 506e hal508 508a 508k 508e hal509 509a 509k 509e hal516 516a 516k 516e hal517 517a 517k 517e hal518 518a 518k 518e hal519 519a 519k 519e hal523 523a 523k 523e 1.3.1. special marking of prototype parts prototype parts are coded with an underscore beneath the temperature range letter on each ic. they may be used for lab experiments and design-ins but are not intended to be used for qualification tests or as production parts. 1.4. operating junction temperature range a: t j = ? 40 c to +170 c k: t j = ? 40 c to +140 c e: t j = ? 40 c to +100 c the hall sensors from micronas are specified to the chip temperature (junction temperature t j ). the relationship between ambient temperature (t a ) and junction temperature is explained in section 5.1. on page 40. 1.5. hall sensor package codes type: 5xx halxxxpa-t temperature range: a, k, or e package: sf for sot-89b ua for to-92ua type: 505 package: to-92ua temperature range: t j = ? 40 c to +100 c example: hal505ua-e hall sensors are available in a wide variety of packaging versions and quantities. for more detailed information, please refer to the brochure: ? ordering codes for hall sensors ? . 1.6. solderability all packages: according to iec68-2-58 during soldering reflow processing and manual rework- ing, a component body temperature of 260 c should not be exceeded. components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 c and 90% relative humidity. out gnd 3 2 1 v dd fig. 1?1: pin configuration
hal5xx 5 micronas 2. functional description the hal 5xx sensors are monolithic integrated circuits which switch in response to magnetic fields. if a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased hall plate forces a hall voltage proportional to this field. the hall voltage is compared with the actual threshold level in the comparator. the temperature-dependent bias increases the supply voltage of the hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. if the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. the built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing. magnetic offset caused by mechanical stress is com- pensated for by using the ? switching offset compensa- tion technique ? . therefore, an internal oscillator pro- vides a two phase clock. the hall voltage is sampled at the end of the first phase. at the end of the second phase, both sampled and actual hall voltages are aver- aged and compared with the actual switching point. sub- sequently, the open drain output switches to the ap- propriate state. the time from crossing the magnetic switching level to switching of output can vary between zero and 1/f osc . shunt protection devices clamp voltage peaks at the output-pin and v dd -pin together with external series resistors. reverse current is limited at the v dd -pin by an internal series resistor up to ? 15 v. no external reverse protection diode is needed at the v dd -pin for reverse voltages ranging from 0 v to ? 15 v. fig. 2 ? 1: hal5xx block diagram hal5xx temperature dependent bias switch hysteresis control comparator output v dd 1 out 3 clock hall plate gnd 2 hal5xx short circuit & overvoltage protection reverse voltage & overvoltage protection t v ol v out 1/f osc = 16 s fig. 2 ? 2: timing diagram v oh b b on f osc t t t f t i dd t
hal5xx 6 micronas 3. specifications 3.1. outline dimensions fig. 3 ? 1: plastic small outline transistor package (sot-89b) weight approximately 0.035 g dimensions in mm 4.55 1.7 min. 0.25 2.55 0.4 0.4 0.4 1.5 3.0 0.06 0.04 branded side spgs0022-5-a3/2e y 123 4 0.2 0.15 0.3 2 ? 0.2 sensitive are a top view 1.15 3.2. dimensions of sensitive area 0.25 mm x 0.12 mm 3.3. positions of sensitive areas sot-89b to-92ua x center of the package center of the package y 0.95 mm nominal 1.0 mm nominal fig. 3 ? 2: plastic transistor single outline package (to-92ua) weight approximately 0.12 g dimensions in mm 0.75 0.2 3.1 0.2 0.55 branded side 0.36 0.8 0.3 45 y 14.0 min. 1.27 1.27 2.54 123 0.42 4.06 0.1 3.05 0.1 0.48 spgs7002-9-a/2e ? 0.4 sensitive area 1.5 note: for all package diagrams, a mechanical tolerance of 0.05 mm applies to all dimensions where no tolerance is explicitly given. an improvement of the to-92ua package with reduced tolerances will be introduced end of 2001.
hal5xx 7 micronas 3.4. absolute maximum ratings symbol parameter pin no. min. max. unit v dd supply voltage 1 ? 15 28 1) v ? v p test voltage for supply 1 ? 24 2) ? v ? i dd reverse supply current 1 ? 50 1) ma i ddz supply current through protection device 1 ? 200 3) 200 3) ma v o output voltage 3 ? 0.3 28 1) v i o continuous output on current 3 ? 50 1) ma i omax peak output on current 3 ? 250 3) ma i oz output current through protection device 3 ? 200 3) 200 3) ma t s storage temperature range 5) ? 65 150 c t j junction temperature range ? 40 ? 40 150 170 4) c 1) as long as t j max is not exceeded 2) with a 220 ? series resistance at pin 1 corresponding to the test circuit on page 40 3) t<2 ms 4) t < 1000h 5) components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 c and 90% relative humidity. stresses beyond those listed in the ? absolute maximum ratings ? may cause permanent damage to the device. this is a stress rating only. functional operation of the device at these or any other conditions beyond those indicated in the ? recommended operating conditions/characteristics ? of this specification is not implied. exposure to absolute maxi- mum ratings conditions for extended periods may affect device reliability. 3.5. recommended operating conditions symbol parameter pin no. min. max. unit v dd supply voltage 1 3.8 24 v i o continuous output on current 3 0 20 ma v o output voltage (output switched off) 3 0 24 v
hal5xx 8 micronas 3.6. electrical characteristics at t j = ? 40 c to +170 c , v dd = 3.8 v to 24 v, as not otherwise specified in conditions typical characteristics for t j = 25 c and v dd = 12 v symbol parameter pin no. min. typ. max. unit conditions i dd supply current 1 2.3 3 4.2 ma t j = 25 c i dd supply current over temperature range 1 1.6 3 5.2 ma v ddz overvoltage protection at supply 1 ? 28.5 32 v i dd = 25 ma, t j = 25 c, t = 20 ms v oz overvoltage protection at output 3 ? 28 32 v i oh = 25 ma, t j = 25 c, t = 20 ms v ol output voltage 3 ? 130 280 mv i ol = 20 ma, t j = 25 c v ol output voltage over temperature range 3 ? 130 400 mv i ol = 20 ma i oh output leakage current 3 ? 0.06 0.1 a output switched off, t j = 25 c, v oh = 3.8 to 24 v i oh output leakage current over temperature range 3 ? ? 10 a output switched off, t j 150 c, v oh = 3.8 to 24 v f osc internal oscillator chopper frequency ? 49 62 ? khz t j = 25 c, v dd = 4.5 v to 24 v f osc internal oscillator chopper fre- quency over temperature range ? 38 62 ? khz t en(o) enable time of output after setting of v dd 1 ? 30 70 s v dd = 12 v 1) t r output rise time 3 ? 75 400 ns v dd = 12 v, r l = 820 ohm, c l = 20 pf t f output fall time 3 ? 50 400 ns v dd = 12 v, r l = 820 ohm, c l = 20 pf r thjsb case sot-89b thermal resistance junction to substrate backside ? ? 150 200 k/w fiberglass substrate 30 mm x 10 mm x 1.5mm, pad size see fig. 3 ? 3 r thja case to-92ua thermal resistance junction to soldering point ? ? 150 200 k/w 1) b > b on + 2 mt or b < b off ? 2 mt for hal 50x, b > b off + 2 mt or b < b on ? 2 mt for hal 51x fig. 3 ? 3: recommended pad size sot-89b dimensions in mm 5.0 2.0 2.0 1.0
hal5xx 9 micronas 3.7. magnetic characteristics overview at t j = ? 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. sensor parameter on point b on off point b off hysteresis b hys unit switching type t j min. typ. max. min. typ. max. min. typ. max. hal 501 ? 40 c ? 0.8 0.6 2.5 ? 2.5 ? 0.8 0.8 0.5 1.4 2 mt bipolar 25 c ? 0.5 0.5 2.3 ? 2.3 ? 0.7 0.5 0.5 1.2 1.9 mt 170 c ? 1.5 0.7 3 ? 2.5 ? 0.2 2 0.4 0.9 1.8 mt hal 502 ? 40 c 1 2.8 5 ? 5 ? 2.8 ? 1 4.5 5.6 7.2 mt latching 25 c 1 2.6 4.5 ? 4.5 ? 2.6 ? 1 4.5 5.2 7 mt 170 c 0.9 2.3 4.3 ? 4.3 ? 2.3 ? 0.9 3.5 4.6 6.8 mt hal 503 ? 40 c 6.4 8.6 10.8 ? 10.8 ? 8.6 ? 6.4 14.6 17.2 20.6 mt latching 25 c 6 8 10 ? 10 ? 8 ? 6 13.6 16 18 mt 170 c 4 6.4 8.9 ? 8.9 ? 6 ? 4 11 12.4 16 mt hal 504 ? 40 c 10.3 13 15.7 5.3 7.5 9.6 4.4 5.5 6.5 mt unipolar 25 c 9.5 12 14.5 5 7 9 4 5 6.5 mt 170 c 8.5 10.2 13.7 4.2 5.9 8.5 3.2 4.3 6.4 mt hal 505 ? 40 c 11.8 15 18.3 ? 18.3 ? 15 ? 11.8 26 30 34 mt latching 25 c 11 13.5 17 ? 17 ? 13.5 ? 11 24 27 32 mt 170 c 9.4 11.7 16.1 ? 16.1 ? 11.7 ? 9.4 20 23.4 31.3 mt hal 506 ? 40 c 4.3 5.9 7.7 2.1 3.8 5.4 1.6 2.1 2.8 mt unipolar 25 c 3.8 5.5 7.2 2 3.5 5 1.5 2 2.7 mt 170 c 3.2 4.6 6.8 1.7 3 5.2 0.9 1.6 2.6 mt hal 508 ? 40 c 15.5 19 21.9 14 16.7 20 1.6 2.3 2.8 mt unipolar 25 c 15 18 20.7 13.5 16 19 1.5 2 2.7 mt 170 c 12.7 15.3 20 11.4 13.6 18.3 1 1.7 2.6 mt hal 509 ? 40 c 23.1 27.4 31.1 19.9 23.8 27.2 2.9 3.6 3.9 mt unipolar 25 c 23.1 26.8 30.4 19.9 23.2 26.6 2.8 3.5 3.9 mt 170 c 21.3 25.4 28.9 18.3 22.1 25.3 2.5 3.3 3.8 mt hal 516 ? 40 c 2.1 3.8 5.4 4.3 5.9 7.7 1.6 2.1 2.8 mt unipolar 25 c 2 3.5 5 3.8 5.5 7.2 1.5 2 2.7 mt inverted 170 c 1.7 3 5.2 3.2 4.6 6.8 0.9 1.6 2.6 mt hal 517 ? 40 c 14 17.1 21.5 15.5 19.6 22.5 1.6 2.5 3 mt unipolar 25 c 13.5 16.2 19 15 18.3 20.7 1.5 2.1 2.7 mt inverted 170 c 9 12.3 18 10.5 13.7 20 0.8 1.4 2.4 mt hal 518 ? 40 c 14 16.7 20 15.5 19 22 1.5 2.3 3 mt unipolar 25 c 13.5 16 19 15 18 20.7 1.4 2 2.8 mt inverted 170 c 11 13.6 18.3 12.2 15.3 20 0.8 1.7 2.6 mt note: for detailed descriptions of the individual types, see pages 14 and following.
hal5xx 10 micronas magnetic characteristics overview, continued sensor parameter on point b on off point b off hysteresis b hys unit switching type t j min. typ. max. min. typ. max. min. typ. max. hal 519 ? 40 c ? 5.4 ? 3.8 ? 2.1 ? 7.7 ? 5.9 ? 4.3 1.6 2.1 2.8 mt unipolar 25 c ? 5 ? 3.6 ? 2 ? 7.2 ? 5.5 ? 3.8 1.5 1.9 2.7 mt inverted 170 c ? 5.2 ? 3.0 ? 1.5 ? 6.8 ? 4.6 ? 2.8 0.9 1.6 2.6 mt hal 523 ? 40 c 28 34.5 42 18 24 30 7 10.5 14 mt unipolar 25 c 28 34.5 42 18 24 30 7 10.5 14 mt 170 c 28 34.5 42 18 24 30 7 10.5 14 mt note: for detailed descriptions of the individual types, see pages 14 and following. ? 15 ? 10 ? 5 0 5 10 15 20 ? 15 ? 10 ? 5 0 5 101520253035 v ma v dd i dd t a = ? 40 c t a = 25 c t a =170 c 25 hal 5xx fig. 3 ? 4: typical supply current versus supply voltage 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 12345678 v ma v dd i dd t a = ? 40 c t a = 25 c t a = 170 c t a = 100 c hal 5xx fig. 3 ? 5: typical supply current versus supply voltage
hal5xx 11 micronas 0 1 2 3 4 5 ? 50 0 50 100 150 200 c ma t a i dd v dd = 3.8 v v dd = 12 v v dd = 24 v hal 5xx fig. 3 ? 6: typical supply current versus ambient temperature 0 10 20 30 40 50 60 70 80 90 100 ? 50 0 50 100 150 200 c khz t a f osc v dd = 3.8 v v dd = 4.5 v...24 v hal 5xx fig. 3 ? 7: typ. internal chopper frequency versus ambient temperature 0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 v khz v dd f osc t a = ? 40 c t a = 25 c t a = 170 c hal 5xx fig. 3 ? 8: typ. internal chopper frequency versus supply voltage 0 10 20 30 40 50 60 70 80 90 100 3 3.5 4.0 4.5 5.0 5.5 6.0 v khz v dd f osc t a = ? 40 c t a = 25 c t a = 170 c hal 5xx fig. 3 ? 9: typ. internal chopper frequency versus supply voltage
hal5xx 12 micronas 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 v mv v dd v ol t a = ? 40 c t a = 25 c t a = 170 c i o = 20 ma t a = 100 c hal 5xx fig. 3 ? 10: typical output low voltage versus supply voltage 0 100 200 300 400 500 600 3 3.5 4.0 4.5 5.0 5.5 6.0 v mv v dd v ol t a = ? 40 c t a = 25 c t a = 170 c i o = 20 ma t a =100 c hal 5xx fig. 3 ? 11: typical output low voltage versus supply voltage 0 100 200 300 400 ? 50 0 50 100 150 200 c mv t a v ol v dd = 24 v v dd = 3.8 v v dd = 4.5 v hal 5xx fig. 3 ? 12: typical output low voltage versus ambient temperature i o = 20 ma 15 20 25 30 35 v a v oh i oh t a = ? 40 c t a = 170 c t a = 150 c t a = 100 c t a = 25 c 10 ? 6 10 ? 5 10 ? 4 10 ? 3 10 ? 2 10 ? 1 10 0 10 1 10 2 10 3 10 4 hal 5xx fig. 3 ? 13: typical output high current versus output voltage
hal5xx 13 micronas ? 50 0 50 100 150 200 c a t a i oh v oh = 24 v v oh = 3.8 v 10 ? 5 10 ? 4 10 ? 3 10 ? 2 10 ? 1 10 0 10 1 10 2 hal 5xx fig. 3 ? 14: typical output leakage current versus ambient temperature ? 30 ? 20 ? 10 0 10 20 30 0.01 0.10 1.00 10.00 100.00 1000.00 db a f i dd v dd = 12 v t a = 25 c quasi-peak- measurement hal 5xx max. spurious signals 1 10 100 1000 mhz fig. 3 ? 15: typ. spectrum of supply current 0 10 20 30 40 50 60 70 80 0.01 0.10 1.00 10.00 100.00 1000.00 db v f v dd v p = 12 v t a = 25 c quasi-peak- measurement test circuit 2 hal 5xx max. spurious signals 1 10 100 1000 mhz fig. 3 ? 16: typ. spectrum at supply voltage
hal501 14 micronas 4. type description 4.1. hal 501 the hal 501 is the most sensitive sensor of this family with bipolar switching behavior (see fig. 4 ? 1). the output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. the output state is not defined for all sensors if the magnetic field is removed again. some sensors will change the output state and some sensors will not. for correct functioning in the application, the sensor re- quires both magnetic polarities (north and south) on the branded side of the package. magnetic features: ? switching type: bipolar ? very high sensitivity ? typical b on : 0.5 mt at room temperature ? typical b off : ? 0.7 mt at room temperature ? operates with static magnetic fields and dynamic mag- netic fields up to 10 khz applications the hal 501 is the optimal sensor for all applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: ? applications with large airgap or weak magnets, ? rotating speed measurement, ? cam shaft sensors, and ? magnetic encoders. fig. 4 ? 1: definition of magnetic switching points for the hal 501 b hys output voltage 0 b off b on v ol v o b magnetic characteristics at t j = ? 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset b offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. ? 40 c ? 0.8 0.6 2.5 ? 2.5 ? 0.8 0.8 0.5 1.4 2 ? 0.1 mt 25 c ? 0.5 0.5 2.3 ? 2.3 ? 0.7 0.5 0.5 1.2 1.9 ? 1.4 ? 0.1 1.4 mt 100 c ? 0.9 0.5 2.5 ? 2.5 ? 0.6 0.9 0.5 1.1 1.8 0 mt 140 c ? 1.2 0.6 2.8 ? 2.5 ? 0.5 1.3 0.5 1.1 1.8 0 mt 170 c ? 1.5 0.7 3 ? 2.5 ? 0.2 2 0.4 0.9 1.8 0.2 mt the hysteresis is the difference between the switching points b hys = b on ? b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal501 15 micronas ? 3 ? 2 ? 1 0 1 2 3 0 5 10 15 20 25 30 v mt v dd b on b off t a = ? 40 c t a = 25 c t a = 170 c t a = 100 c hal 501 b on b off fig. 4 ? 2: typ. magnetic switching points versus supply voltage ? 3 ? 2 ? 1 0 1 2 3 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off t a = ? 40 c t a = 25 c t a = 170 c t a = 100 c hal 501 b on b off fig. 4 ? 3: typ. magnetic switching points versus supply voltage ? 3 ? 2 ? 1 0 1 2 3 ? 50 0 50 100 150 200 c mt t a , t j b on b off v dd = 3.8 v v dd = 4.5 v... 24 v b on max b on typ b on min b off max b off typ b off min hal 501 fig. 4 ? 4: magnetic switching points versus temperature note: in the diagram ? magnetic switching points versus temperature ? the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal502 16 micronas 4.2. hal 502 the hal 502 is the most sensitive latching sensor of this family (see fig. 4 ? 5). the output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. the output does not change if the magnetic field is removed. for changing the output state, the opposite magnetic field polarity must be applied. for correct functioning in the application, the sensor re- quires both magnetic polarities (north and south) on the branded side of the package. magnetic features: ? switching type: latching ? high sensitivity ? typical b on : 2.6 mt at room temperature ? typical b off : ? 2.6 mt at room temperature ? operates with static magnetic fields and dynamic mag- netic fields up to 10 khz ? typical temperature coefficient of magnetic switching points is ? 1000 ppm/k applications the hal 502 is the optimal sensor for all applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: ? applications with large airgap or weak magnets, ? rotating speed measurement, ? commutation of brushless dc motors, ? cam shaft sensors, and ? magnetic encoders. fig. 4 ? 5: definition of magnetic switching points for the hal 502 b hys output voltage 0 b off b on v ol v o b magnetic characteristics at t j = ? 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. ? 40 c 1 2.8 5 ? 5 ? 2.8 ? 1 4.5 5.6 7.2 0 mt 25 c 1 2.6 4.5 ? 4.5 ? 2.6 ? 1 4.5 5.2 7 ? 1.5 0 1.5 mt 100 c 0.95 2.5 4.4 ? 4.4 ? 2.5 ? 0.95 4 5 6.8 0 mt 140 c 0.9 2.4 4.3 ? 4.3 ? 2.4 ? 0.9 3.7 4.8 6.8 0 mt 170 c 0.9 2.3 4.3 ? 4.3 ? 2.3 ? 0.9 3.5 4.6 6.8 0 mt the hysteresis is the difference between the switching points b hys = b on ? b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal502 17 micronas ? 6 ? 4 ? 2 0 2 4 6 0 5 10 15 20 25 30 v mt v dd b on b off hal 502 b on b off t a = ? 40 c t a = 25 c t a = 170 c t a = 100 c fig. 4 ? 6: typ. magnetic switching points versus supply voltage ? 6 ? 4 ? 2 0 2 4 6 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off t a = ? 40 c t a = 25 c t a = 170 c t a = 100 c hal 502 b on b off fig. 4 ? 7: typ. magnetic switching points versus supply voltage ? 6 ? 4 ? 2 0 2 4 6 ? 50 0 50 100 150 200 c mt t a , t j b on b off v dd = 3.8 v v dd = 4.5 v... 24 v b on max b on typ b on min b off max b off typ b off min hal 502 fig. 4 ? 8: magnetic switching points versus temperature note: in the diagram ? magnetic switching points versus temperature ? the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal503 18 micronas 4.3. hal 503 the hal 503 is a latching sensor (see fig. 4 ? 9). the output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. the output does not change if the magnetic field is removed. for changing the output state, the opposite magnetic field polarity must be applied. for correct functioning in the application, the sensor re- quires both magnetic polarities (north and south) on the branded side of the package. magnetic features: ? switching type: latching ? medium sensitivity ? typical b on : 7.6 mt at room temperature ? typical b off : ? 7.6 mt at room temperature ? operates with static magnetic fields and dynamic mag- netic fields up to 10 khz ? typical temperature coefficient of magnetic switching points is ? 1000 ppm/k applications the hal 503 is the optimal sensor for applications with alternating magnetic signals such as: ? multipole magnet applications, ? rotating speed measurement, ? commutation of brushless dc motors, and ? window lifter. fig. 4 ? 9: definition of magnetic switching points for the hal 503 b hys output voltage 0 b off b on v ol v o b magnetic characteristics at t j = ? 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. ? 40 c 6.4 8.4 10.8 ? 10.8 ? 8.6 ? 6.4 14.6 17 20.6 ? 0.1 mt 25 c 6 7.6 10 ? 10 ? 7.6 ? 6 13.6 15.2 18 ? 1.5 0 1.5 mt 100 c 4.8 7.1 9.5 ? 9.5 ? 6.9 ? 4.8 12.3 14 17 0.1 mt 140 c 4.4 6.7 9.2 ? 9.2 ? 6.4 ? 4.4 11.5 13.1 16.5 0.1 mt 170 c 4 6.4 8.9 ? 8.9 ? 6 ? 4 11 12.4 16 0.2 mt the hysteresis is the difference between the switching points b hys = b on ? b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal503 19 micronas ? 12 ? 8 ? 4 0 4 8 12 0 5 10 15 20 25 30 v mt v dd b on b off hal 503 b on b off t a = ? 40 c t a = 25 c t a = 170 c t a = 100 c fig. 4 ? 10: typ. magnetic switching points versus supply voltage ? 12 ? 8 ? 4 0 4 8 12 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off hal 503 b on b off t a = ? 40 c t a = 25 c t a = 170 c t a = 100 c fig. 4 ? 11: typ. magnetic switching points versus supply voltage ? 12 ? 8 ? 4 0 4 8 12 ? 50 0 50 100 150 200 c mt t a , t j b on b off v dd = 3.8 v v dd = 4.5 v... 24 v b on max b on typ b on min b off max b off typ b off min hal 503 fig. 4 ? 12: magnetic switching points versus temperature note: in the diagram ? magnetic switching points versus ambient temperature ? the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal504 20 micronas 4.4. hal 504 the hal 504 is a unipolar switching sensor (see fig. 4 ? 13). the output turns low with the magnetic south pole on the branded side of the package and turns high if the mag- netic field is removed. the sensor does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. magnetic features: ? switching type: unipolar ? medium sensitivity ? typical b on : 12 mt at room temperature ? typical b off : 7 mt at room temperature ? operates with static magnetic fields and dynamic mag- netic fields up to 10 khz ? typical temperature coefficient of magnetic switching points is ? 1000 ppm/k applications the hal 504 is the optimal sensor for applications with one magnetic polarity such as: ? solid state switches, ? contactless solution to replace micro switches, ? position and end-point detection, and ? rotating speed measurement. b hys output voltage fig. 4 ? 13: definition of magnetic switching points for the hal 504 0b off b on v ol v o b magnetic characteristics at t j = ? 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. ? 40 c 10.3 13 15.7 5.3 7.5 9.6 4.4 5.5 6.5 10.2 mt 25 c 9.5 12 14.5 5 7 9 4 5 6.5 7.2 9.5 11.8 mt 100 c 9 11.1 14.1 4.6 6.4 8.7 3.6 4.7 6.4 8.8 mt 140 c 8.7 10.6 13.9 4.4 6.1 8.6 3.4 4.5 6.4 8.4 mt 170 c 8.5 10.2 13.7 4.2 5.9 8.5 3.2 4.3 6.4 8 mt the hysteresis is the difference between the switching points b hys = b on ? b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal504 21 micronas 0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30 v mt v dd b on b off t a = ? 40 c t a = 25 c t a = 170 c t a = 100 c hal 504 b on b off fig. 4 ? 14: typ. magnetic switching points versus supply voltage 0 2 4 6 8 10 12 14 16 18 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off t a = ? 40 c t a = 25 c t a = 170 c t a = 100 c hal 504 b on b off fig. 4 ? 15: typ. magnetic switching points versus supply voltage 0 2 4 6 8 10 12 14 16 18 ? 50 0 50 100 150 200 c mt t a , t j b on b off v dd = 3.8 v v dd = 4.5 v... 24 v b on max b on typ b on min b off max b off typ b off min hal 504 fig. 4 ? 16: magnetic switching points versus temperature note: in the diagram ? magnetic switching points versus temperature ? the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal505 22 micronas 4.5. hal 505 the hal 505 is a latching sensor (see fig. 4 ? 17). the output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. the output does not change if the magnetic field is removed. for changing the output state, the opposite magnetic field polarity must be applied. for correct functioning in the application, the sensor re- quires both magnetic polarities (north and south) on the branded side of the package. magnetic features: ? switching type: latching ? low sensitivity ? typical b on : 13.5 mt at room temperature ? typical b off : ? 13.5 mt at room temperature ? operates with static magnetic fields and dynamic mag- netic fields up to 10 khz ? typical temperature coefficient of magnetic switching points is ? 1000 ppm/k applications the hal 505 is the optimal sensor for applications with alternating magnetic signals such as: ? multipole magnet applications, ? rotating speed measurement, ? commutation of brushless dc motors, and ? window lifter. fig. 4 ? 17: definition of magnetic switching points for the hal 505 b hys output voltage 0 b off b on v ol v o b magnetic characteristics at t j = ? 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. ? 40 c 11.8 15 18.3 ? 18.3 ? 15 ? 11.8 26 30 34 0 mt 25 c 11 13.5 17 ? 17 ? 13.5 ? 11 24 27 32 ? 1.5 0 1.5 mt 100 c 10.2 12.4 16.6 ? 16.6 ? 12.4 ? 10.2 22 24.8 31.3 0 mt 140 c 9.7 12 16.3 ? 16.3 ? 12 ? 9.7 21 24.2 31.3 0 mt 170 c 9.4 11.7 16.1 ? 16.1 ? 11.7 ? 9.4 20 23.4 31.3 0 mt the hysteresis is the difference between the switching points b hys = b on ? b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal505 23 micronas ? 20 ? 15 ? 10 ? 5 0 5 10 15 20 0 5 10 15 20 25 30 v mt v dd b on b off hal 505 b on b off t a = ? 40 c t a = 25 c t a = 170 c t a = 100 c fig. 4 ? 18: typ. magnetic switching points versus supply voltage ? 20 ? 15 ? 10 ? 5 0 5 10 15 20 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off hal 505 b on b off t a = ? 40 c t a = 25 c t a = 170 c t a = 100 c fig. 4 ? 19: typ. magnetic switching points versus supply voltage ? 20 ? 15 ? 10 ? 5 0 5 10 15 20 ? 50 0 50 100 150 200 hal 505 c mt t a , t j b on b off b on max b on typ b on min b off max b off typ b off min v dd = 3.8 v v dd = 4.5 v... 24 v fig. 4 ? 20: magnetic switching points versus temperature note: in the diagram ? magnetic switching points versus ambient temperature ? the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal506 24 micronas 4.6. hal 506 the hal 506 is the most sensitive unipolar switching sensor of this family (see fig. 4 ? 21). the output turns low with the magnetic south pole on the branded side of the package and turns high if the mag- netic field is removed. the sensor does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. in the hal 5xx family, the hal 516 is a sensor with the same magnetic characteristics but with an inverted out- put characteristic. magnetic features: ? switching type: unipolar ? high sensitivity ? typical b on : 5.5 mt at room temperature ? typical b off : 3.5 mt at room temperature ? operates with static magnetic fields and dynamic mag- netic fields up to 10 khz ? typical temperature coefficient of magnetic switching points is ? 1000 ppm/k applications the hal 506 is the optimal sensor for all applications with one magnetic polarity and weak magnetic ampli- tude at the sensor position such as: ? applications with large airgap or weak magnets, ? solid state switches, ? contactless solution to replace micro switches, ? position and end point detection, and ? rotating speed measurement. b hys output voltage 0b off b on v ol v o b fig. 4 ? 21: definition of magnetic switching points for the hal 506 magnetic characteristics at t j = ? 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. ? 40 c 4.3 5.9 7.7 2.1 3.8 5.4 1.6 2.1 2.8 4.8 mt 25 c 3.8 5.5 7.2 2 3.5 5 1.5 2 2.7 3.8 4.5 6.2 mt 100 c 3.6 5.1 7 1.9 3.3 4.9 1.2 1.8 2.6 4.2 mt 140 c 3.4 4.8 6.9 1.8 3.1 5.1 1 1.7 2.6 4 mt 170 c 3.2 4.6 6.8 1.7 3 5.2 0.9 1.6 2.6 3.8 mt the hysteresis is the difference between the switching points b hys = b on ? b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal506 25 micronas 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 v mt v dd b on b off t a = ? 40 c t a = 25 c t a = 170 c t a = 100 c hal 506 b on b off fig. 4 ? 22: typ. magnetic switching points versus supply voltage 0 1 2 3 4 5 6 7 8 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off hal 506 b on b off t a = ? 40 c t a = 25 c t a = 170 c t a = 100 c fig. 4 ? 23: typ. magnetic switching points versus supply voltage 0 1 2 3 4 5 6 7 8 ? 50 0 50 100 150 200 c mt t a , t j b on b off v dd = 3.8 v v dd = 4.5 v... 24 v b on max b on typ b on min b off max b off typ b off min hal 506 fig. 4 ? 24: magnetic switching points versus temperature note: in the diagram ? magnetic switching points versus temperature ? the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal508 26 micronas 4.7. hal 508 the hal 508 is a unipolar switching sensor (see fig. 4 ? 25). the output turns low with the magnetic south pole on the branded side of the package and turns high if the mag- netic field is removed. the sensor does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. in the hal 5xx family, the hal 518 is a sensor with the same magnetic characteristics but with an inverted out- put characteristic. magnetic features: ? switching type: unipolar ? medium sensitivity ? typical b on : 18 mt at room temperature ? typical b off : 16 mt at room temperature ? operates with static magnetic fields and dynamic mag- netic fields up to 10 khz ? typical temperature coefficient of magnetic switching points is ? 1000 ppm/k applications the hal 508 is the optimal sensor for applications with one magnetic polarity such as: ? solid state switches, ? contactless solution to replace micro switches, ? position and end point detection, and ? rotating speed measurement. b hys output voltage 0b off b on v ol v o b fig. 4 ? 25: definition of magnetic switching points for the hal 508 magnetic characteristics at t j = ? 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. ? 40 c 15.5 19 21.9 14 16.7 20 1.6 2.3 2.8 17.8 mt 25 c 15 18 20.7 13.5 16 19 1.5 2 2.7 14 17 20 mt 100 c 13.9 16.6 20.4 12.5 14.8 18.7 1.2 1.8 2.6 15.7 mt 140 c 13.2 15.8 20.2 11.9 14.1 18.5 1.1 1.7 2.6 15 mt 170 c 12.7 15.3 20 11.4 13.6 18.3 1 1.7 2.6 14.4 mt the hysteresis is the difference between the switching points b hys = b on ? b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal508 27 micronas 0 5 10 15 20 25 0 5 10 15 20 25 30 v mt v dd b on b off t a = ? 40 c t a = 25 c t a = 170 c t a = 100 c hal 508 b on b off fig. 4 ? 26: typ. magnetic switching points versus supply voltage 0 5 10 15 20 25 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off hal 508 b on b off t a = ? 40 c t a = 25 c t a = 170 c t a = 100 c fig. 4 ? 27: typ. magnetic switching points versus supply voltage 0 5 10 15 20 25 ? 50 0 50 100 150 200 c mt t a , t j b on b off v dd = 3.8 v v dd = 4.5 v... 24 v b on max b on typ b on min b off max b off typ b off min hal 508 fig. 4 ? 28: magnetic switching points versus temperature note: in the diagram ? magnetic switching points versus temperature ? the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal509 28 micronas 4.8. hal 509 the hal 509 is a unipolar switching sensor (see fig. 4 ? 29). the output turns low with the magnetic south pole on the branded side of the package and turns high if the mag- netic field is removed. the sensor does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. magnetic features: ? switching type: unipolar ? low sensitivity ? typical b on : 26.8 mt at room temperature ? typical b off : 23.2 mt at room temperature ? operates with static magnetic fields and dynamic mag- netic fields up to 10 khz ? typical temperature coefficient of magnetic switching points is ? 300 ppm/k applications the hal 509 is the optimal sensor for applications with one magnetic polarity and strong magnetic fields at the sensor position such as: ? solid state switches, ? contactless solution to replace micro switches, ? position and end point detection, and ? rotating speed measurement. b hys output voltage 0b off b on v ol v o b fig. 4 ? 29: definition of magnetic switching points for the hal 509 magnetic characteristics at t j = ? 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. ? 40 c 23.1 27.4 31.1 19.9 23.8 27.2 2.9 3.6 3.9 25.6 mt 25 c 23.1 26.8 30.4 19.9 23.2 26.6 2.8 3.5 3.9 21.5 25 28.5 mt 100 c 22.2 26.1 29.7 19.1 22.7 25.9 2.7 3.4 3.8 24.4 mt 140 c 21.7 25.7 29.2 18.6 22.4 25.6 2.6 3.3 3.8 24 mt 170 c 21.3 25.4 28.9 18.3 22.1 25.3 2.5 3.3 3.8 23.7 mt the hysteresis is the difference between the switching points b hys = b on ? b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal509 29 micronas 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 v mt v dd b on b off t a = ? 40 c t a = 25 c t a = 170 c t a = 100 c hal 509 b on b off fig. 4 ? 30: typ. magnetic switching points versus supply voltage 0 5 10 15 20 25 30 35 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off t a = ? 40 c t a = 25 c t a = 170 c t a = 100 c hal 509 b on b off fig. 4 ? 31: typ. magnetic switching points versus supply voltage 0 5 10 15 20 25 30 35 ? 50 0 50 100 150 200 c mt t a , t j b on b off v dd = 3.8 v v dd = 4.5 v... 24 v b on max b on typ b on min b off max b off typ b off min hal 509 fig. 4 ? 32: magnetic switching points versus temperature note: in the diagram ? magnetic switching points versus temperature ? the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal516 30 micronas 4.9. hal 516 the hal 516 is the most sensitive unipolar switching sensor with an inverted output of this family (see fig. 4 ? 33). the output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. the sensor does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. in the hal 5xx family, the hal 506 is a sensor with the same magnetic characteristics but with a normal output characteristic. magnetic features: ? switching type: unipolar inverted ? high sensitivity ? typical b on : 3.5 mt at room temperature ? typical b off : 5.5 mt at room temperature ? operates with static magnetic fields and dynamic mag- netic fields up to 10 khz ? typical temperature coefficient of magnetic switching points is ? 1000 ppm/k applications the hal 516 is the optimal sensor for all applications with one magnetic polarity and weak magnetic ampli- tude at the sensor position where an inverted output sig- nal is required such as: ? applications with large airgap or weak magnets, ? solid state switches, ? contactless solution to replace micro switches, ? position and end point detection, and ? rotating speed measurement. b hys output voltage 0b on b off v o v ol b fig. 4 ? 33: definition of magnetic switching points for the hal 516 magnetic characteristics at t j = ? 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. ? 40 c 2.1 3.8 5.4 4.3 5.9 7.7 1.6 2.1 2.8 4.8 mt 25 c 2 3.5 5 3.8 5.5 7.2 1.5 2 2.7 3.8 4.5 6.2 mt 100 c 1.9 3.3 4.9 3.6 5.1 7 1.2 1.8 2.6 4.2 mt 140 c 1.8 3.1 5.1 3.4 4.8 6.9 1 1.7 2.6 4 mt 170 c 1.7 3 5.2 3.2 4.6 6.8 0.9 1.6 2.6 3.8 mt the hysteresis is the difference between the switching points b hys = b off ? b on the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal516 31 micronas 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 v mt v dd b on b off t a = ? 40 c t a = 25 c t a = 170 c t a = 100 c hal 516 b on b off fig. 4 ? 34: typ. magnetic switching points versus supply voltage 0 1 2 3 4 5 6 7 8 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off hal 516 b on b off t a = ? 40 c t a = 25 c t a = 170 c t a = 100 c fig. 4 ? 35: typ. magnetic switching points versus supply voltage 0 1 2 3 4 5 6 7 8 ? 50 0 50 100 150 200 c mt t a , t j b on b off v dd = 3.8 v v dd = 4.5 v... 24 v b on max b on typ b on min b off max b off typ b off min hal 516 fig. 4 ? 36: magnetic switching points versus temperature note: in the diagram ? magnetic switching points versus temperature ? the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal517 32 micronas 4.10. hal 517 the hal 517 is a unipolar switching sensor with inverted output (see fig. 4 ? 37). the output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. the sensor does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. magnetic features: ? switching type: unipolar inverted ? medium sensitivity ? typical on point is 16.2 mt at room temperature ? typical off point is 18.3 mt at room temperature ? operates with static magnetic fields and dynamic mag- netic fields up to 10 khz ? typical temperature coefficient of magnetic switching points is ? 1700 ppm/k applications the hal 517 is the optimal sensor for applications with one magnetic polarity where an inverted output signal is required such as: ? solid state switches, ? contactless solution to replace micro switches, ? position and end point detection, and ? rotating speed measurement. b hys output voltage 0b on b off v o v ol b fig. 4 ? 37: definition of magnetic switching points for the hal 517 magnetic characteristics at t j = ? 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. ? 40 c 14 17.1 21.5 15.5 19.6 22.5 1.6 2.5 3 18.3 mt 25 c 13.5 16.2 19 15 18.3 20.7 1.5 2.1 2.7 14 17.2 20 mt 100 c 11 14.3 18.5 12.8 16.1 20.4 1.2 1.8 2.6 15.2 mt 140 c 10 13.2 18.2 11.5 14.8 20.2 1 1.6 2.6 14 mt 170 c 9 12.3 18 10.5 13.7 20 0.8 1.4 2.4 13 mt the hysteresis is the difference between the switching points b hys = b off ? b on the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal517 33 micronas 0 5 10 15 20 25 0 5 10 15 20 25 30 v mt v dd b on b off t a = ? 40 c t a = 25 c t a = 170 c t a = 100 c hal 517 b on b off fig. 4 ? 38: typ. magnetic switching points versus supply voltage 0 5 10 15 20 25 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off t a = ? 40 c t a = 25 c t a = 170 c t a = 100 c hal 517 b on b off fig. 4 ? 39: typ. magnetic switching points versus supply voltage 0 5 10 15 20 25 ? 50 0 50 100 150 200 c mt t a , t j b on b off v dd = 3.8 v v dd = 4.5 v... 24 v b on max b on typ b on min b off max b off typ b off min hal 517 fig. 4 ? 40: magnetic switching points versus temperature note: in the diagram ? magnetic switching points versus ambient temperature ? the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal518 34 micronas 4.11. hal 518 the hal 518 is a unipolar switching sensor with inverted output (see fig. 4 ? 41). the output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. the sensor does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. in the hal 5xx family, the hal 508 is a sensor with the same magnetic characteristics but with a normal output characteristic. magnetic features: ? switching type: unipolar inverted ? medium sensitivity ? typical b on : 16 mt at room temperature ? typical b off : 18 mt at room temperature ? operates with static magnetic fields and dynamic mag- netic fields up to 10 khz ? typical temperature coefficient of magnetic switching points is ? 1000 ppm/k applications the hal 518 is the optimal sensor for applications with one magnetic polarity where an inverted output signal is required such as: ? solid state switches, ? contactless solution to replace micro switches, ? position and end point detection, and ? rotating speed measurement. b hys output voltage 0b on b off v o v ol b fig. 4 ? 41: definition of magnetic switching points for the hal 518 magnetic characteristics at t j = ? 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. ? 40 c 14 16.7 20 15.5 19 22 1.5 2.3 3 17.8 mt 25 c 13.5 16 19 15 18 20.7 1.4 2 2.8 14 17 20 mt 100 c 12.5 14.8 18.7 13.9 16.6 20.4 1 1.8 2.7 15.7 mt 140 c 11.7 14.1 18.5 13 15.8 20.2 0.9 1.7 2.7 15 mt 170 c 11 13.6 18.3 12.2 15.3 20 0.8 1.7 2.6 14.4 mt the hysteresis is the difference between the switching points b hys = b off ? b on the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal518 35 micronas 0 5 10 15 20 25 0 5 10 15 20 25 30 v mt v dd b on b off t a = ? 40 c t a = 25 c t a = 170 c t a = 100 c hal 518 b on b off fig. 4 ? 42: typ. magnetic switching points versus supply voltage 0 5 10 15 20 25 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off hal 518 b on t a = ? 40 c t a = 25 c t a = 170 c t a = 100 c b off fig. 4 ? 43: typ. magnetic switching points versus supply voltage 0 5 10 15 20 25 ? 50 0 50 100 150 200 c mt t a , t j b on b off v dd = 3.8 v v dd = 4.5 v... 24 v b on max b on typ b on min b off max b off typ b off min hal 518 fig. 4 ? 44: magnetic switching points versus temperature note: in the diagram ? magnetic switching points versus temperature ? the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal519 36 micronas 4.12. hal 519 the hal 519 is a very sensitive unipolar switching sen- sor with an inverted output sensitive only to the magnetic north polarity. (see fig. 4 ? 45). the output turns high with the magnetic north pole on the branded side of the package and turns low if the magnet- ic field is removed. the sensor does not respond to the magnetic south pole on the branded side, the output re- mains low. for correct functioning in the application, the sensor requires only the magnetic north pole on the branded side of the package. magnetic features: ? switching type: unipolar inverted, north sensitive ? high sensitivity ? typical b on : ? 3.5 mt at room temperature ? typical b off : ? 5.5 mt at room temperature ? operates with static magnetic fields and dynamic mag- netic fields up to 10 khz ? typical temperature coefficient of magnetic switching points is ? 1000 ppm/k applications the hal 519 is the optimal sensor for all applications with the north magnetic polarity and weak magnetic am- plitude at the sensor position where an inverted output signal is required such as: ? solid state switches, ? contactless solution to replace micro switches, ? position and end point detection, and ? rotating speed measurement. b hys output voltage 0 b off b on v ol v o b fig. 4 ? 45: definition of magnetic switching points for the hal 519 magnetic characteristics at t j = ? 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. ? 40 c ? 5.4 ? 3.8 ? 2.1 ? 7.7 ? 5.9 ? 4.3 1.6 2.1 2.8 ? 4.8 mt 25 c ? 5 ? 3.6 ? 2 ? 7.2 ? 5.5 ? 3.8 1.5 1.9 2.7 ? 6.2 ? 4.5 ? 3.8 mt 100 c ? 4.9 ? 3.3 ? 1.9 ? 6.7 ? 5 ? 3.4 1.2 1.7 2.6 ? 4.2 mt 140 c ? 5.1 ? 3.1 ? 1.7 ? 6.8 ? 4.8 ? 3.1 1 1.7 2.6 ? 4 mt 170 c ? 5.2 ? 3 ? 1.5 ? 6.8 ? 4.6 ? 2.8 0.9 1.6 2.6 ? 3.8 mt the hysteresis is the difference between the switching points b hys = b on ? b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal519 37 micronas ? 8 ? 7 ? 6 ? 5 ? 4 ? 3 ? 2 ? 1 0 0 5 10 15 20 25 30 v mt v dd b on b off hal 519 b on b off fig. 4 ? 46: typ. magnetic switching points versus supply voltage t a = ? 40 c t a = 25 c t a = 100 c t a = 170 c ? 8 ? 7 ? 6 ? 5 ? 4 ? 3 ? 2 ? 1 0 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off hal 519 b on b off fig. 4 ? 47: typ. magnetic switching points versus supply voltage t a = ? 40 c t a = 25 c t a = 100 c t a = 170 c ? 8 ? 7 ? 6 ? 5 ? 4 ? 3 ? 2 ? 1 0 ? 50 0 50 100 150 200 c mt t a , t j b on b off b on max b on typ b on min b off max b off typ b off min hal 519 fig. 4 ? 48: magnetic switching points versus temperature v dd = 3.8 v v dd = 4.5 v...24 v note: in the diagram ? magnetic switching points versus temperature ? the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal523 38 micronas 4.13. hal 523 the hal 523 is the least sensitive unipolar switching sensor of this family (see fig. 4 ? 49). the output turns low with the magnetic south pole on the branded side of the package and turns high if the mag- netic field is removed. the sensor does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. magnetic features: ? switching type: unipolar ? low sensitivity ? typical b on : 34.5 mt at room temperature ? typical b off : 24 mt at room temperature ? operates with static magnetic fields and dynamic mag- netic fields up to 10 khz applications the hal 523 is the optimal sensor for applications with one magnetic polarity and strong magnetic fields at the sensor position such as: ? solid state switches, ? contactless solution to replace micro switches, ? position and end point detection, and ? rotating speed measurement. b hys output voltage 0b off b on v ol v o b fig. 4 ? 49: definition of magnetic switching points for the hal 523 magnetic characteristics at t j = ? 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. ? 40 c 28 34.5 42 18 24 30 7 10.5 14 29.3 mt 25 c 28 34.5 42 18 24 30 7 10.5 14 29.3 mt 100 c 28 34.5 42 18 24 30 7 10.5 14 29.3 mt 140 c 28 34.5 42 18 24 30 7 10.5 14 29.3 mt 170 c 28 34.5 42 18 24 30 7 10.5 14 29.3 mt the hysteresis is the difference between the switching points b hys = b on ? b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal523 39 micronas 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 v mt v dd b on b off hal 523 b on b off fig. 4 ? 50: typ. magnetic switching points versus supply voltage t a = ? 40 c t a = 25 c t a = 100 c t a = 170 c 0 5 10 15 20 25 30 35 40 45 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off hal 523 b on b off fig. 4 ? 51: typ. magnetic switching points versus supply voltage t a = ? 40 c t a = 25 c t a = 100 c t a = 170 c 0 5 10 15 20 25 30 35 40 45 ? 50 0 50 100 150 200 c mt t a , t j b on b off b on max b on typ b on min b off max b off typ b off min hal 523 fig. 4 ? 52: magnetic switching points versus temperature v dd = 3.8 v v dd = 4.5 v...24 v note: in the diagram ? magnetic switching points versus temperature ? the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal5xx 40 micronas 5. application notes 5.1. ambient temperature due to the internal power dissipation, the temperature on the silicon chip (junction temperature t j ) is higher than the temperature outside the package (ambient tem- perature t a ). t j = t a + ? t at static conditions, the following equation is valid: ? t = i dd * v dd * r th for typical values, use the typical parameters. for worst case calculation, use the max. parameters for i dd and r th , and the max. value for v dd from the application. for all sensors, the junction temperature range t j is specified. the maximum ambient temperature t amax can be calculated as: t amax = t jmax ? ? t 5.2. extended operating conditions all sensors fulfill the electrical and magnetic characteris- tics when operated within the recommended operating conditions (see page 7). supply voltage below 3.8 v typically, the sensors operate with supply voltages above 3 v, however, below 3.8 v some characteristics may be outside the specification. note: the functionality of the sensor below 3.8 v has not been tested. for special test conditions, please contact micronas. 5.3. start-up behavior due to the active offset compensation, the sensors have an initialization time (enable time t en(o) ) after applying the supply voltage. the parameter t en(o) is specified in the electrical characteristics (see page 8). during the initialization time, the output state is not de- fined and the output can toggle. after t en(o) , the output will be low if the applied magnetic field b is above b on . the output will be high if b is below b off . in case of sen- sors with an inverted switching behavior (hal 516 ... hal519), the output state will be high if b > b off and low if b < b on . for magnetic fields between b off and b on , the output state of the hal sensor after applying v dd will be either low or high. in order to achieve a well-defined output state, the applied magnetic field must be above b onmax , respectively, below b offmin . 5.4. emc and esd for applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see figures 5 ? 1). the series resistor and the capacitor should be placed as closely as pos- sible to the hal sensor. applications with this arrangement passed the emc tests according to the product standards din 40839. note: the international standard iso 7637 is similar to the used product standard din 40839. please contact micronas for the detailed investigation reports with the emc and esd results. out gnd 3 2 1v dd 4.7 nf v emc v p r v 220 ? r l 1.2 k ? 20 pf fig. 5 ? 1: test circuit for emc investigations
hal5xx 41 micronas
hal5xx 42 micronas
hal5xx 43 micronas
hal5xx 44 micronas 6. data sheet history 1. final data sheet: ? hal 501...506, 508, 509, 516... 518, hall effect sensor family, aug. 11, 1999, 6251-485-1ds. first release of the final data sheet. major changes to the previous edition ? hal501 ... hal506, hal 508 ? , hall effect sensor ics, may 5, 1997, 6251-405-1ds: ? additional types: hal509, hal516 ... hal518 ? additional package sot-89b ? additional temperature range ? k ? ? outline dimensions for sot-89a and to-92ua changed ? absolute maximum ratings changed ? electrical characteristics changed ? magnetic characteristics for hal 501, hal 503, hal 506, and hal 509 changed 2. final data sheet: ? hal 501...506, 508, 509, 516... 519, 523, hall effect sensor family ? , feb. 14, 2001, 6251-485-2ds. second release of the final data sheet. major changes: ? additional types: hal519, hal523 ? phased-out package sot-89a removed ? temperature range ? c ? removed ? outline dimensions for sot-89b: reduced toler- ances micronas gmbh hans-bunte-strasse 19 d-79108 freiburg (germany) p.o. box 840 d-79008 freiburg (germany) tel. +49-761-517-0 fax +49-761-517-2174 e-mail: docservice@micronas.com internet: www.micronas.com printed in germany by systemdruck+verlags-gmbh, freiburg (02/01) order no. 6251-485-2ds all information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. any new issue of this data sheet invalidates previous issues. product availability and delivery are exclusively subject to our respective order confirma- tion form; the same applies to orders based on development samples delivered. by this publication, micronas gmbh does not assume re- sponsibility for patent infringements or other rights of third parties which may result from its use. further, micronas gmbh reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. no part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of micronas gmbh.

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